Simulations for structural properties and crystal growth on Si(001) surface

Surface Science

Volumn 357-358, Issue , 1996, Pages 394-401

  Terakura, Kiyoyuki ^a   Uda, Tsuyoshi ^b   Yamasaki, Takahiro ^b   Miyazaki, Takehide ^a  

^a NATL INST FOR ADV INTERDISC RES   (Japan)

^b JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

Density functional calculations; Growth; Low index single crystal surfaces; Molecular beam epitaxy; Semiconducting surfaces; Silicon; Surface defects; Surface diffusion

Indexed keywords

ACTIVATION ENERGY; CALCULATIONS; CRYSTAL DEFECTS; CRYSTAL GROWTH; EPITAXIAL GROWTH; MODEL STRUCTURES; MOLECULAR BEAM EPITAXY; PROBABILITY DENSITY FUNCTION; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE PROPERTIES; SURFACE STRUCTURE;

DENSITY FUNCTIONAL CALCULATIONS; HOMOEPITAXIAL CRYSTAL GROWTH; LOW INDEX SINGLE CRYSTAL SURFACES; NOVEL STRUCTURE MODELS; SECOND SURFACE LAYER; SEMICONDUCTING SURFACES; STRUCTURAL PROPERTIES; SURFACE DEFECTS; SURFACE DIFFUSION;

COMPUTER SIMULATION;

EID: 0030169178     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00187-2     Document Type: Article

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