SCOPUS 정보 검색 플랫폼

Volumn 159, Issue 1-4, 1996, Pages 636-639

Optical properties of a ZnSSe microcavity fabricated by epitaxial lift-off

(16) Aherne, T a Bradley, A L a Doran, J P a O'Gorman, J a Heffernan, J F a Hegarty, J a De Neve, H b Brys, C b Geens, G b Van Daele, P b Baets, R b Demeester, P b Rakennus, K c Salokatve, A c Uusimaa, P c Pessa, M c

a TRINITY COLLEGE DUBLIN (Ireland)

b GHENT UNIVERSITY (Belgium)

c TAMPERE UNIVERSITY OF TECHNOLOGY (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; EXCITONS; LIGHT EMISSION; MIRRORS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

DISTRIBUTED BRAGG REFLECTORS; EPITAXIAL LIFT OFF; FABRY-PEROT RESONANCE; OPTICAL STANDING WAVE; SEMICONDUCTOR MICROCAVITIES; SPONTANEOUS EMISSION;

CAVITY RESONATORS;

EID: 0030562456 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00781-4 Document Type: Article

Times cited : (3)

References (7)

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