Initial growth processes of ZnSe on cleaned GaAs(001) surfaces by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 8 PART A, 1996, Pages

  Uesugi, Katsuhiro ^a   Suzuki, Hideki ^a   Nashiki, Hiroyuki ^a   Obinata, Toshio ^a   Kumano, Hidekazu ^a   Suemune, Ikuo ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

GaAs; Heteroepitaxy; Initial growth; MOVPE; Organic As; ZnSe

Indexed keywords

ARSENIC; ATOMIC FORCE MICROSCOPY; CLEANING; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SURFACE PHENOMENA; X RAY DIFFRACTION;

INITIAL GROWTH; THERMAL CLEANING; THREE DIMENSIONAL ISLAND GROWTH; TWO DIMENSIONAL GROWTH MODE; ZINC SELENIDE;

SEMICONDUCTOR GROWTH;

EID: 0030216894     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1006     Document Type: Article

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