Theory of ripple topography inhibition in depth profiling with sample rocking

Applied Physics Letters

Volumn 71, Issue 21, 1997, Pages 3066-3068

  Carter, G ^a  

^a UNIVERSITY OF SALFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ATOMS; DIFFUSION; ION BEAMS; RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SILICA; SPUTTERING; SURFACE ROUGHNESS; VISCOSITY; VISCOUS FLOW;

DEPTH PROFILING; ION FLUX; POWER SPECTRAL DENSITY; RIPPLE TOPOGRAPHY; SURFACE DIFFUSION;

ION BOMBARDMENT;

EID: 0031275806     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119438     Document Type: Article

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