Magnetic field induced mott transition of a one-component electron plasma in GaAs quantum wells

Solid State Communications

Volumn 104, Issue 5, 1997, Pages 287-291

  Yoon, H W ^a,c   Sturge, M D ^a   Pfeiffer, L N ^b  

^a DARTMOUTH COLLEGE   (United States)

^b NOKIA RESEARCH CENTER   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

A. Quantum wells; C. Electron electron interactions; E. Luminescence; Optical properties; Semiconductors

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSITIONS; EXCITONS; MAGNETOOPTICAL EFFECTS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRON ELECTRON INTERACTIONS; LANDAU LEVEL FILLING FACTOR; MOTT TRANSITIONS; SEMICONDUCTING ALUMINUM ARSENIDE; TIME RESOLVED MAGNETOPHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031273508     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00285-8     Document Type: Article

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