Diffusion of free trions in mixed type GaAs/AlAs quantum wells

Solid State Communications

Volumn 100, Issue 11, 1996, Pages 743-747

  Yoon, H W ^a   Ron, A ^a,c   Sturge, M D ^a   Pfeiffer, L N ^b  

^a DARTMOUTH COLLEGE   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

A. quantum wells; A. semiconductors; D. electron electron interactions; D. optical properties; E. luminescence

Indexed keywords

CARRIER CONCENTRATION; DIFFUSION IN SOLIDS; EXCITONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SUPERCONDUCTING TRANSITION TEMPERATURE;

FREE TRIONS; RADIATIVE LIFETIME;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030385292     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(96)00527-3     Document Type: Article

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