Negatively charged excitons (X-) and D- triplet transitions in GaAs/Al0.3Ga0.7As multiple quantum wells

Surface Science

Volumn 361-362, Issue , 1996, Pages 363-367

  Ryu, S R ^a   Yu, W Y ^a   Fu, L P ^b   Jiang, Z X ^a   Petrou, A ^a   McCombe, B D ^a   Schaff, W ^c  

^a UNIVERSITY AT BUFFALO   (United States)

^b EMORY UNIVERSITY   (United States)

^c Cornell University   (United States)

Author keywords

Gallium arsenide; Infrared absorption spectroscopy; Photoconductivity; Photoluminescence; Quantum wells; Reflection spectroscopy

Indexed keywords

ABSORPTION SPECTROSCOPY; BINDING ENERGY; ELECTRON TRANSITIONS; EXCITONS; INFRARED SPECTROSCOPY; MAGNETIC FIELDS; MAGNETOOPTICAL EFFECTS; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; REFLECTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

FAR INFRARED MAGNETOSPECTROSCOPY; FILLING FACTOR; FREE ELECTRONS; LANDAU LEVEL; MULTIPLE QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030190149     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00422-0     Document Type: Article

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