Optoelectronic properties of transition metal and rare earth doped epitaxial layers on InP for magneto-optics

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 709-713

  Stadler, B J H ^a   Vaccaro, K ^a   Davis, A ^a   Ramseyer, G O ^a,b   Martin, E A ^a   Dauplaise, H M ^a   Theodore, L M ^a   Lorenzo, J P ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b USAF   (United States)

Author keywords

Faraday rotation InGaAs; InGaAsP; InP; LPE; Optoelectronic properties; Rare earth; Transition metal doping; Waveguides

Indexed keywords

EID: 4344663600     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02666528     Document Type: Article

References (15)

1. D. Gualtieri, J. Appl. Phys. 67, 4793 (1990).
2. S. Donati, V. Annovazzi-Lodi and T. Tambosso, IEEE Proc. 135, [J5] 372 (1988).
3. K. Matsuda and S. Ishizuka, Appl. Opt. 30, 1963 (1991).
4. N.P. Belov, A.N. Pikhtin and A.D. Yas'kov, Sov. Phys. Semicond. 19, 991 (1985).
5. J. Gaj, R. Gatazka and M. Nawrocki, Sol. State Commun. 25, 193 (1978).
6. K. Guergouri, M. Ferah, R. Triboulet and Y. Marfaing, J. Cryst. Growth 139, 6 (1994).
7. J.A. Gaj, J. Ginter and R.R. Galazka, Phys. Stat. Sol. B 89, 655-662 (1978).
8. Y.R. Shen, Phys. Rev. 133, (2A) A511 (1964).
9. M.J. Weber, SPIE Laser and Nonlinear Optical Materials 681, 75 (1986).
10. J.T. Kohli and J.E. Shelby, Phys. Chem. Glasses 32, 109 (1991).
11. C.C. Robinson and R.E. Graf, Appl. Opt. 3, 1190 (1964).
12. M. Marinelli, E. Milani, and P. Paroli, Appl. Opt. 27, 4360 (1988).
13. V. Swaminathan and A.T. Macrander, Materials Aspects of GaAs and InP Based Structures, (Englewood Cliffs, NJ: Prentice-Hall, 1991), p. 13.
14. A. Davis, H. Dauplaise, J. Lorenzo, G. Ramseyer, J. Horrigan, Rare Earth Doped Semiconductors, 301 (Pittsburgh, PA: Material Research Society, 1992), p.151.
15. H.K. Kim, C.C. Li, X.M. Fang, J. Solomon, G. Nykolak and P.C. Becker, Rare Earth Doped Semiconductors 301, (Pittsburgh, PA: Material Research Society, 1992), p. 55.