A low-voltage tunneling-based silicon microaccelerometer

IEEE Transactions on Electron Devices

Volumn 44, Issue 11, 1997, Pages 1875-1882

  Yeh, Chingwen ^a   Najafi, Khalil ^a  

^a The Department of Civil and Environmental Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MICROSTRUCTURE; SEMICONDUCTING BORON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DOPING; SILICON WAFERS; SPURIOUS SIGNAL NOISE; TEMPERATURE MEASUREMENT;

LOW VOLTAGE TUNNELING BASED SILICON MICROACCELEROMETERS; TEMPERATURE COEFFICIENT OF OFFSET (TCO); TEMPERATURE COEFFICIENT OF SENSITIVITY (TCS);

ACCELEROMETERS;

EID: 0031270441     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.641355     Document Type: Article

References (29)

1. K. H.-L. Chau et al., "An integrated force-balanced capacitive accelerometer for low-G applications," in Proc. Int. Conf. Solid-State Sensors Actuators, Transducers'95, Stockholm, Sweden, June 1995, pp. 593-596.
2. K. J. Ma, N. Yazdi, and K. Najafi, "A bulk-silicon capacitive microaccelerometer with built-in overrange and force-balance electrodes," in Proc. Tech. Dig., Solid-State Sensor Actuator Workshop, Hilton Head, SC, June 1994, pp. 160-163.
3. W. Yun, R. T. Howe, and P. R. Gray, "Surface micromachined, digitally force-balanced accelerometer with integrated CMOS detection circuitry," in Proc. Dig. IEEE Solid-State Sensor Actuator Workshop, Hilton Head, SC, June 1992, pp. 126-131.
4. W. Henrion, L. DiSanza, M. Ip, S. Terry, and H. Jerman, "Wide dynamic range direct digital accelerometer," in Proc. Dig. IEEE Solid-State Sensor Actuator Workshop, Hilton Head, SC, June 1990, pp. 153-157.
5. T. W. Kenny et al., "Wide-bandwidth electromechanical actuators for tunneling displacement transducer," IEEE J. Microelectromech. Syst., vol. 3, pp. 97-104, Sept. 1994.
6. Y. Gianchandani and K. Najafi, "A bulk silicon dissolved wafer process for microelectromechanical devices," IEEE J. Microelectromech. Syst., vol. 1, pp. 77-85, June 1992.
7. C. Yeh and K. Najafi, "A low-voltage bulk-silicon tunneling-based microaccelerometer," in Tech. Dig., IEEE Int. Electron Devices Meet. (IEDM), Washington, DC, Dec. 1995, pp. 593-596.
8. R. L. Kubena, G. M. Atkinson, W. P. Robinson, and F. P. Stratton, "A new miniaturized surface micromachined tunneling accelerometer," IEEE Electron Device Lett., vol. 17, pp. 306-308, June 1996.
9. H. K. Rockstad, T. W. Kenny, J. K. Reynolds, and W. J. Kaiser, "A miniature high-sensitivity broad-band accelerometer based on electron tunneling transducers," Sensors Actuators, vol. A43, pp. 107-114, 1994.
10. R. H. Fowler and L. Nordheim, "Electron emission in intense electric field," Proc. R. Soc. Land. A, vol. 119, pp. 173-181, 1928.
11. J. G. Simmons, "Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film," J. Appl. Phys., vol. 34, no. 6, pp. 1793-1803, June 1963.
12. G. Binning and H. Rohrer, "Scanning tunneling microscopy," IBM J. Res. Develop., vol. 30, pp. 355-369, 1986.
13. I. Brodie, "Physical considerations in vacuum microelectronics devices," IEEE Trans. Electron Devices, vol. ED36, pp. 2641-2644, Nov. 1989.
14. W. Yun, "A surface micromachined accelerometer with integrated CMOS detection circuitry," Ph.D. dissertation, Univ. California, Berke-ley, pp. 59-65, Nov. 1992.
15. V. M. McNeil, M. J. Novack, and M. A. Schmidt, "Design and fabrication of thin-film microaccelerometers using wafer bonding," in Proc. Int. Conf. Solid-State Sensors Actuators, Transducers'93, Yokohama, Jpn, June 1993, pp. 822-825.
16. T. B. Gabrielson, "Mechanical-thermal noise in micromachined acoustic and vibration sensors," IEEE Trans. Electron Devices, vol. 40, pp. 903-909, May 1993.
17. P. R. Gray and R. G. Meyer, Analysis and Design of Analog Integrated Circuits, 2nd ed. New York: Wiley, 1984, pp. 412-583.
18. C. R. Paul and S. A. Nasar, Introduction to Electromagnetic Fields, 2nd ed. New York: McGraw-Hill, 1987, pp. 77-155.
19. R. P. van Kämpen, M. J. Vellekoop, P. M. Sarro, and R. F. Wolffenbuttel, "Application of electrostatic feedback to critical damping of an integrated silicon capacitive accelerometer," Sens. Actuators A, vol. 43, pp. 100-106, 1994.
20. H. L. Chau and K. D. Wise, "An ultraminiature solid state pressure sensor for a cardiovascular catheter," in Proc. Int. Conf. Solid-State Sensors, Actuators, Transducers'S7, Tokyo, Jpn, June 1987, pp. 344-347.
21. S. T. Cho, K. Najafi, C. L. Lowman, and K. D. Wise, "An ultrasensitive silicon pressure-based flowmeter," in Proc. Tech. Dig., IEEE Int. Electron Devices Meet., Washington, DC, Dec. 1989, pp. 499-502.
22. Y. Gianchandani and K. Najafi, "Silicon micromachined thermal profilers," in Proc. Tech. Dig., IEEE Int. Electron Devices Meet., Washington, DC, Dec. 1993, pp. 191-194.
23. Y. Zhang and K. D. Wise, "An ultra-sensitive capacitive pressure sensor with a bossed dielectric diaphragm," in Proc. Tech. Dig., Solid-State Sensor, Actuator Workshop, Hilton Head, SC, June 1994, pp. 205-208.
24. Y. Gianchandani and K. Najafi, "Batch-assembled multi-level micromachined mechanisms from bulk silicon," J. Micromech. Microeng, U.K., vol. 2, pp. 80-85, 1992.
25. J. K. Robertson and K. D. Wise, "A nested electrostatically-actuated microvalve for an integrated microflow controller," in Proc. IEEE Workshop Micro Electro Mech. Syst., Oiso, Japan, Feb. 1994, pp. 7-12.
26. C. Yeh and K. Najafi, "Bulk-silicon tunneling-based pressure sensors," in Proc. Tech. Dig., Solid-State Sensor, Actuator Workshop, Hilton Head, SC, June 1994, pp. 201-204.
27. T. T. Tsong, "Dynamic behavior and instability of field emission surfaces," IEEE Trans. Electron Devices, vol. 38, pp. 2317-2319, Oct. 1991.
28. C. J. Chen, Introduction to Scanning Tunneling Microscopy. New York: Oxford Univ. Press, 1993, pp. 195-210.
29. H. J. Mamin et al, "Contamination-mediated deformation of graphite by scanning tunneling microscope," Phys. Rev. B, vol. 34, no. 12, pp. 9015-9018, Dec. 1986.