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Volumn 17, Issue 6, 1996, Pages 306-308

A new miniaturized surface micromachined tunneling accelerometer

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRODES; ELECTROSTATICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; SPURIOUS SIGNAL NOISE;

EID: 0030172320     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.496466     Document Type: Article
Times cited : (64)

References (8)
  • 6
    • 0029547930 scopus 로고
    • A low-voltage bulk-silicon tunneling-based microaccelerometer
    • Dec.
    • C. Yeh and K. Najafi, "A low-voltage bulk-silicon tunneling-based microaccelerometer," Int. Electron Device Meeting Dig., pp. 23.1.1-23.1.4, Dec. 1995.
    • (1995) Int. Electron Device Meeting Dig.
    • Yeh, C.1    Najafi, K.2
  • 7
    • 0022096576 scopus 로고
    • Scanning tunneling microscopy
    • G. Binnig and H. Rhorer, "Scanning tunneling microscopy," IBM J. Res. Develop., vol. 30, p. 355, 1986.
    • (1986) IBM J. Res. Develop. , vol.30 , pp. 355
    • Binnig, G.1    Rhorer, H.2
  • 8
    • 0343470740 scopus 로고
    • Contamination-mediated deformation of graphite by the scanning tunneling microscope
    • H. J. Mamin, E. Ganz, D. W. Abraham, R. E. Thompson, and J. Clarke, "Contamination-mediated deformation of graphite by the scanning tunneling microscope," Phys. Rev. B, vol. 34, p. 9015, 1986.
    • (1986) Phys. Rev. B , vol.34 , pp. 9015
    • Mamin, H.J.1    Ganz, E.2    Abraham, D.W.3    Thompson, R.E.4    Clarke, J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.