Polarization insensitive 1.55-μm optical amplifier with GaAs delta-strained Ga0.47In0.53As quantum wells

IEEE Photonics Technology Letters

Volumn 9, Issue 10, 1997, Pages 1340-1342

  Seiferth, F ^a   Johnson, F G ^c   Merritt, S A ^a   Fox, S ^a   Whaley, R D ^a   Chen, Y J ^b   Dagenais, M ^a   Stone, D R ^c  

^a UNIVERSITY OF MARYLAND   (United States)

^b Baltimore County   (United States)

^c LABORATORY FOR PHYSICAL SCIENCES   (United States)

Author keywords

Molecular beam epitaxy; Multiple quantum well; Polarization independence; Semiconductor optical amplifier; Strain

Indexed keywords

BANDWIDTH; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

POLARIZATION INDEPENDENCE;

SEMICONDUCTOR LASERS;

EID: 0031257621     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.623256     Document Type: Article

References (11)

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