1.55 μm polarisation insensitive InGaAsP strained MQW optical amplifier integrated with short spot-size converters

Electronics Letters

Volumn 32, Issue 15, 1996, Pages 1403-1405

  Sigogne, D ^a   Ougazzaden, A ^a   Meichenin, D ^a   Mersali, B ^a   Carenco, A ^a   Simon, J C ^a   Valiente, I ^a   Vassallo, C ^a   Billes, L ^a  

^a ORANGE LABS   (France)

Author keywords

Semiconductor optical amplifiers; Semiconductor quantum wells

Indexed keywords

AMPLIFICATION; BAND STRUCTURE; ELECTRIC CONVERTERS; ELECTRIC CURRENTS; ENERGY GAP; LIGHT POLARIZATION; OPTICAL FIBER COUPLING; OPTICAL FIBERS; PERFORMANCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

BURIED RIDGE STRUCTURE; OPTICAL AMPLIFICATION; SEMICONDUCTOR OPTICAL AMPLIFIERS; SHORT SPOT SIZE CONVERTERS; TAPERS;

LIGHT AMPLIFIERS;

EID: 0030189354     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960904     Document Type: Article

References (6)

1. OUGAZZADEN, A., SIGOGNE, D., MIRCEA, A., RAO, E.V.K., RAMDANE, A., and SILVESTRE, L.: 'Atmospheric pressure MOVPE growth of high performance polarisation insensitive strain compensated MQW InGaAsP/InGaAs optical amplifier', Electron. Lett., 1995, 31, (15), pp. 1242-1244
2. SIGOGNE, D., OUGAZZADEN, A., MERSALI, B., MEICHENIN, D., LANDREAU, J., AMRA, C., and RAMDANE, A.: '1.55μm polarisation insensitive InGaAsP strained MQW optical amplifier with a high confinement factor'. Proc. ECOC'95, 1995, Brussels, pp. 267-270
3. MAGARI, K., OKAMOTO, M., SUZUKI, Y., SATO, K., NOGUCHI, Y., and MIKAMI, O.: 'Polarization-insensitive optical amplifier with tensile-strained barrier MQW structure', J. Quantum Electron, 1994, 30, pp. 695-702
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5. BOUADMA, N., KAZMIERSKI, C., and SEMO, J.: 'Over 245mW 1.3μm buried ridge laser diodes on n-substrate fabricated by reactive ion beam etching technique', Appl. Phys. Lett., 1991, 59, pp. 22-24
6. VASSALLO, C.: 'Analysis of tapered mode transformers for semiconductor optical amplifiers', Opt. Quantum Electron., 1994, 26, pp. S235-S248