Novel structure of delta-strained quantum well for polarization insensitive semiconductor devices at 1.55 μm

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 1996, Pages 13-14

  Hovinen, M ^a   Gopalan, B ^a   Johnson, F G ^a   Dagenais, M ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; CRYSTAL LATTICES; EIGENVALUES AND EIGENFUNCTIONS; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; OPTICAL WAVEGUIDES; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; STRAIN;

DELTA STRAINED QUANTUM WELLS; POLARIZATION INSENSITIVE SEMICONDUCTOR OPTICAL AMPLIFIERS; TENSILE STRAIN EFFECT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030384370     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)