Diamond nucleation on singlecrystalline 6H-SiC substrates by bias-enhanced nucleation in hot filament chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 10, 1997, Pages 6295-6299

  Li, Xi ^a   Shirafuji, Tatsuru ^a   Hayashi, Yasuaki ^a   Lilov, Stanislav ^a,b   Nishino, Shigehiro ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF SOFIA   (Bulgaria)

Author keywords

6H SiC; Bias enhanced nucleation; Diamond film; Inclined pyramid crystal; Plasma

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; ETCHING; FILM GROWTH; FREE ENERGY; HYDROGEN; INTERFACIAL ENERGY; NUCLEATION; PLASMA SHEATHS; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES;

BIAS ENHANCED NUCLEATION (BEN);

DIAMOND FILMS;

EID: 0031250478     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6295     Document Type: Article

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