Optimization of diamond nucleation and growth using MW-PACVD method

Diamond and Related Materials

Volumn 5, Issue 3-5, 1996, Pages 312-316

  Buchkremer Hermanns, H ^a   Ren, H ^a   Weiss H ^a  

^a UNIVERSITY OF SIEGEN   (Germany)

Author keywords

MW PACVD; Nucleation and growth; Optimization method; SiC substrate

Indexed keywords

EID: 0041875579     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-9635(95)00353-3     Document Type: Article

References (12)

1. S. Yugo, T. Kanai and T. Kimura, Diamond Relat. Mater., 1 (1992) 388.
2. W. Zhu, R.C. McCune, J.E. deVries, M.A. Tamor and K.Y.S. Ng, Diamond Relat. Mater., 4 (1995) 220.
3. S. Soderberg, A. Gerendas and M. Sjostrand, Vacuum, 41 (1990) 1317.
4. A. Gicquel, C. Héau, D. Fabre and J. Perrière, Diamond Relat. Mater., 1 (1992) 776.
5. A.B. Harker and J.F. DeNatale, J. Mater. Res., 5 (1990) 818.
6. P.K. Bachmann, Adv. Mater., 2 (1990) 195.
7. W. Zhu, R. Messier and A.R. Badzian, in J.P. Dismukes et al. (eds.), Proc. 1st Int. Symp. on Diamond and Diamond-Like Films, The Electrochemical Society, Pennington, NJ, 1989, p. 61.
8. A. Gicquel, E. Anger, M.F. Ravet, D. Fabre, G. Scatena and Z.Z. Wang, Diamond Relat. Mater., 2 (1993) 417.
9. H. Buchkremer-Hermanns, H. Ren and H. Weiß, Surf. Coat. Technol., 74/75 (1995) 215.
10. Scientific Institute of Shanghai, Method of Orthogonal Designs, People's Publishers of Shanghai, Shanghai, 1st edn., 1975, p. 210 (in Chinese).
11. H.R. Lindman, Analysis of Variance in Experimental Design, Springer-Verlag, New York, 1992, p. 58.
12. National Bureau of Standards (US), Circ. 539, 2 5, 1953.