Enhancement of secondary electron emission from heavily Si-implanted and Si-doped GaAs

Applied Physics Letters

Volumn 71, Issue 15, 1997, Pages 2142-2144

  Iwase, F ^a   Nakamura, Y ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; CRYSTAL DEFECTS; ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; ION IMPLANTATION; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

BAND BENDING; COLLISION PROBABILITY; ELECTRON TRAP; LINDHORD-SCHARFF-SCHIOTT THEORY; SECONDARY ELECTRON EMISSION; SURFACE EFFECT;

ELECTRON EMISSION;

EID: 0031247341     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119362     Document Type: Article

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