High temperature Schottky diodes with boron-doped homoepitaxial diamond base

Materials Research Bulletin

Volumn 25, Issue 1, 1990, Pages 129-134

  Gildenblat, G Sh ^a   Grot, S A ^a   Hatfield, C W ^a   Wronski, C R ^a,b,c   Badzian, A R ^b   Badzian, T ^b   Messier, R ^b,c  

^a Electronic Materials and Processing Research Laboratory   (United States)

^b Materials Research Laboratory University Park ^*  (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS--EPITAXIAL GROWTH; SEMICONDUCTING FILMS--GROWTH; SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER; SEMICONDUCTOR MATERIALS--DOPING;

HOMOEPITAXIAL DIAMOND; SCHOTTKY DIODES;

SEMICONDUCTING DIAMONDS;

EID: 0025638180     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/0025-5408(90)90172-X     Document Type: Article

References (6)