Degradation of silicon dioxide during selective silicon epitaxy in a dichlorosilane environment

Journal of Electronic Materials

Volumn 25, Issue 7, 1996, Pages 1037-1043

  Hobbs, C C ^a   Wortman, J J ^a   Ozturk M C ^a  

^a Campus Box 7908   (United States)

Author keywords

Degradation; Dichlorosilane; Epitaxy; Si; SiO2

Indexed keywords

DEGRADATION; EPITAXIAL GROWTH; SILANES; SILICON;

DICHLOROSILANES; ELECTRIC FIELD BREAKDOWN; LEAKAGE CURRENTS; PINHOLE ETCHING; SILICON DIOXIDE;

SILICA;

EID: 0030180599     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02659899     Document Type: Article

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