Degradation of silicon dioxide during selective silicon epitaxy in a dichlorosilane environment

Journal of Electronic Materials

Volumn 25, Issue 7, 1996, Pages 1037-1043

  Hobbs, C C ^a   Wortman, J J ^a   Ozturk M C ^a  

^a North Carolina State University   (United States)

Author keywords

Degradation; Dichlorosilane; Epitaxy; Si; SiO2

Indexed keywords

DEGRADATION; EPITAXIAL GROWTH; SILANES; SILICON;

DICHLOROSILANES; ELECTRIC FIELD BREAKDOWN; LEAKAGE CURRENTS; PINHOLE ETCHING; SILICON DIOXIDE;

SILICA;

EID: 0030180599     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02659899     Document Type: Article

References (21)

1. S.S. Wong, D.R. Bradbury, D.C. Chen and K.Y. Chiu., IEDM Tech. Dig. 634 (1984).
2. J. Borland and C. Drowley, Solid State Technol. 28, 141 (1985).
3. J. Fitch, J. Electrochem. Soc. 141, 1046 (1994).
4. J. Regolini, D. Bensahel, J. Mercier and E. Scheid, J. Cryst. Growth 96, 505 (1989).
5. A. Miyauchi, Y. Inoue and T. Suzuki, J. Electrochem. Soc. 138, 3480 (1991).
6. T. Sedgwick, P. Agnello, M. Berkenblit and T. Kuan, J. Electrochem. Soc. 138, 3042 (1991).
7. B. Ginsberg, J. Burghartz, G. Bronner and S. Mader. IBM J. Res. Develop. 34, 816 (1990).
8. K.E. Violette, M.K. Sanganeria, M.C. Öztürk, G. Harris and D. Maher, J. Electrochem. Soc. 141, 3269 (1994).
9. J. Bloem, J. Cryst. Growth 50, 581 (1980).
10. J.A. Fredrich and G.W. Neudeck, J. Appl. Phys. 64, 3538 (1988).
11. R. Bashir et al., IEEE Electron Dev. Lett. 16, 382 (1995).
12. P. Burggraaf, Semiconductor Intl. 15, 71 (1992).
13. P. Roy and A. Sinha, AT&T Tech. J. 67, 155 (1988).
14. S. Raider, S. Herd and R. Walkup, Appl. Phys. Lett. 59, 2424 (1991).
15. R. Devine, W. Warren, J. Xu, H. Wilson, P. Paillet and J. Leray, J. Appl. Phys. 77, 175 (1995).
16. J. Mikkelsen, Appl. Phys. Lett. 45, 1187 (1984).
17. F. Smith and G. Ghidini, J. Electrochem. Soc. 129, 1300 (1982).
18. G. Ghidini and F. Smith, J. Electrochem. Soc. 131, 2924 (1984).
19. S. Liu, L. Chan and J. Borland, in Chemical Vapor Deposition X, ed. G. Cullen, (The Electrochemical Society Inc., 1987), p. 428.
20. F. d'Heurle, Electrochem. Soc. Ext. Abs. 90-2, 446 (1989).
21. D. DiMaria and D. Dong, J. Appl. Phys. 21, 2722 (1980).