Electroabsorption modulation at 1.3 μm on GaAs substrates using a step-graded low temperature grown InAlAs buffer

IEEE Photonics Technology Letters

Volumn 8, Issue 3, 1996, Pages 352-354

  Shen, L ^b   Wieder, H H ^a,b   Chang, W S C ^a,b  

^a IEEE

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; EXCITONS; LIGHT ABSORPTION; LIGHT MODULATION; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SUBSTRATES;

DISTRIBUTED BRAGG REFLECTORS; ELECTROABSORPTION MEASUREMENT; ELECTROABSORPTION MODULATORS; QUANTUM CONFINED STARK EFFECTS; SOLID SOURCE MOLECULAR BEAM EPITAXY; SUBSTRATE TEMPERATURE; WAVEGUIDE MODULATORS; X RAY DIFFRACTION MEASUREMENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030108927     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.481114     Document Type: Article

References (11)

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