1.3 μm strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal-organic vapor epitaxy

Applied Physics Letters

Volumn 70, Issue 1, 1997, Pages 96-98

  Ougazzaden, A ^a   Devaux, F ^a   Rao, E V K ^a   Silvestre, L ^a   Patriarche, G ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002048463     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119319     Document Type: Article

References (8)

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