High-performance and low-consumption 10 Gb/s GaAs PHEMT driver for external modulation transmitter

IEEE Photonics Technology Letters

Volumn 8, Issue 8, 1996, Pages 1029-1031

  Demange, D ^a   Billard, M ^a   Devaux, F ^a   Lefevre R ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC WAVEFORMS; ELECTRONIC EQUIPMENT TESTING; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; LIGHT POLARIZATION; OPTICAL COMMUNICATION; OPTICAL SYSTEMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; TRANSMITTERS;

ELECTROABSORPTION MODULATOR; SATURATION CURRENT; THRESHOLD VOLTAGE; TRANSITION FREQUENCY;

LIGHT MODULATORS;

EID: 0030214214     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.508727     Document Type: Article

References (8)

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8. D. Demange, M. Billard, and R. Lefevre, "20 Gb/s electroabsorption modulator drivers based on 0.2 μm GaAs PHEMT," presented at the Europ. Gallium Arsenide and Related III-V Compounds Applicat. Symp. GaAs'96, June 5-7, 1996, paper IB3.