The non-volatile memory challenge

Semiconductor International

Volumn 20, Issue 10, 1997, Pages 84-92

  Dax, Mark ^a  

^a NONE

Author keywords

Ferroelectric memory; Flash memory; Magnetic memory; Non volatile memory

Indexed keywords

COERCIVE FORCE; ELECTRIC FIELDS; ELECTRODES; ELECTRON TUNNELING; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; LOGIC GATES; MAGNETIC STORAGE; MAGNETORESISTANCE; RANDOM ACCESS STORAGE; ROM; SEMICONDUCTING SILICON;

FERROELECTRIC MEMORY; FLASH MEMORY; MAGNETORESISTIVE RANDOM ACCESS STORAGE;

NONVOLATILE STORAGE;

EID: 0031233542     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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3. R.E. Jones Jr., et al., "Ferroelectric non-volatile memories for low-voltage, low-power applications," Thin Solid Films, vol. 270 (1995), p. 584-588.
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6. W. Warren, Sandia National Laboratories, Albuquerque, N.M., R&D 100 submittal, 1997.
7. 2 Thin Films, Nature," vol. 386, April 1997.
8. B.A. Everitt, A.V. Pohm, J.M. Daughton, "Size Dependence of Switching Thresholds for Pseudo Spin Valve MRAM Cells," J. Applied Phys., 81(8), April 1997.