Flash technology: Challenges and opportunities

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 SUPPL. B, 1996, Pages 6347-6350

  Giridhar, Raghupathy V ^a  

^a INTEL CORPORATION   (United States)

Author keywords

Flash; Memory; Multi level cell; Scaling; Semiconductor; Tunneling; Voltage

Indexed keywords

COSTS; ELECTRON TUNNELING; LOGIC GATES; MARKETING; PERFORMANCE; SEMICONDUCTOR STORAGE;

FLASH MEMORY; MULTILEVEL CELL;

NONVOLATILE STORAGE;

EID: 0030405083     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.6347     Document Type: Review

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