Improved cold electron emission characteristics of electroluminescent porous silicon diodes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 5, 1997, Pages 1661-1665

  Sheng, Xia ^a   Koyama, Hideki ^a   Koshida, Nobuyoshi ^a   Iwasaki, Shingo ^b   Negishi, Nobuyasu ^b   Chuman, Takashi ^b   Yoshikawa, Takamasa ^b   Ogasawara, Kiyohide ^b  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b PIONEER CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; ELECTRON EMISSION; ELECTRONS; MATHEMATICAL MODELS; POROUS SILICON; THERMAL EFFECTS; THERMOOXIDATION;

COLD ELECTRON EMISSION; EMISSION CURRENT; FOWLER-NORDHEIM MODEL; RAPID THERMAL OXIDATION; SURFACE EMITTING COLD CATHODE;

LIGHT EMITTING DIODES;

EID: 0031224087     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589351     Document Type: Article

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