Spin-Valve RAM Cell

IEEE Transactions on Magnetics

Volumn 31, Issue 6, 1995, Pages 3206-3208

  Tang, D D ^a   Wang, P K ^a   Speriosu, V S ^a   Le, S ^a   Kung, K K ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; COPPER; FERROMAGNETIC MATERIALS; MAGNETIC ANISOTROPY; MAGNETIC DOMAINS; MAGNETIC FIELD EFFECTS; MAGNETIZATION; MAGNETORESISTANCE; NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; SILICON; SWITCHING;

DC VOLTAGE; GIANT MAGNETORESISTANCE; HIGH SPEED SENSING SCHEMES; SPIN VALVE STORAGE ELEMENT;

MAGNETIC STORAGE;

EID: 0029406388     PISSN: 00189464     EISSN: 19410069     Source Type: Journal    
DOI: 10.1109/20.490329     Document Type: Article

References (3)

1. A.V. Polm, J.S.T. Huang, J.M. Daughton, D.R. Krohn, V. Mehra, “The Design of A One Megabit Non-volatile M-R Memory Chip Using 1.5×5 um Cells,” IEEE Trans.on MAG, 24, p. 3117, Nov. 88.
2. K.K. Kung, D.D. Tang, P.K. Wang, U.S. Patent 5,343,422, (1994), “Nonvolatile Magnetoresistive Storage Device Using Spin Valve Effect.”
3. B. Dieny, V.S. Speriosu, S. Metin, S.S. P. Parkin, B.A. Gurney, P. Baumgart and D.R. Wilhoit, “Magnetotransport Properties of magnetically soft Spin-valve Structures,” J.Appl.Phys. 69, 47744, (1991)