Low current magnetic-ram memory operation with a high sensitive spin valve material

IEEE Transactions on Magnetics

Volumn 33, Issue 5 PART 1, 1997, Pages 3283-3285

  Matsuyama, K ^a   Asada, H ^a   Ikeda, S ^a   Taniguchi, K ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC STORAGE; MAGNETIC THIN FILMS; MAGNETORESISTANCE;

HIGH SENSITIVE SPIN VALVE MATERIALS; MAGNETIC RANDOM ACCESS MEMORY (MRAM); MEMORY CELLS;

RANDOM ACCESS STORAGE;

EID: 0031222692     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.617918     Document Type: Article

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