New low current memory modes with giant magneto-resistance materials

IEEE Transactions on Magnetics

Volumn 29, Issue 6, 1993, Pages 2593-2595

  Ranmuthu, K T M ^a   Pohm, A V ^b   Daughton, J M ^b   Comstock, C S ^a  

^a IOWA STATE UNIVERSITY   (United States)

^b NVE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRIC VARIABLES MEASUREMENT; ELECTROMAGNETIC FIELDS; MAGNETIC COUPLINGS; MAGNETIC STORAGE; MAGNETIZATION;

GIANT MAGNETO RESISTANCE MATERIALS; MEMORY CELLS; MEMORY MODES; SENSE CURRENT; STATIC MEMORY CELLS;

MAGNETIC MATERIALS;

EID: 0027695299     PISSN: 00189464     EISSN: 19410069     Source Type: Journal    
DOI: 10.1109/20.280853     Document Type: Article

References (3)

1. B. Dieny, V. S. Speriosu, S. Metin, S.S. Parkin, B. A. Gurney, P. Baumgart, D. R. Wilhoit, “Magnetotransport Properties of Magnetically Soft Spin valve Structures”, J. Appl. Phys. 69 (8), pp. 4774–4779 (April 1991).
2. R. J. Celotta, J. Unguris, D. T. Pierce, J. A. Stroscio, “Oscillations in Exchange Coupling Between Magnetic Layers”, 1992 Conf. on Magnetism and Magnetic Materials (December 1992), paper CA-01
3. A. V. Pohm, C. S. Comstock, A. T. Hurst, “Quadrupled Non-Destructive Outputs from M-R Memory Cells Using Reversed Word Fields”, Journ. Appl. Phys. 67, pp. 4881–3 (May 1990