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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1217-1220

Optical characterization of InAs quantum dots fabricated by molecular beam epitaxy

(4) Saitoh, Toshiya a Takeuchi, Hayato a Konda, Jun a Yoh, Kanji a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

Cathodoluminescence; InAs dots; Photoluminescence; Selective etching; Self assembled formation; Strain

Indexed keywords

CATHODOLUMINESCENCE; CHARACTERIZATION; EMISSION SPECTROSCOPY; ENERGY GAP; ETCHING; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

CARRIER CONFINEMENT EFFECT; HIGH PEAK ENERGY SHIFT; INDIUM ARSENIDE QUANTUM DOTS; SELECTIVE ETCHING; SELF ASSEMBLED FORMATION; STRAIN INDUCED BAND GAP WIDENING; UNSTRAINED BAND GAP ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030079756 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.1217 Document Type: Article

Times cited : (3)

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