ESD protection for CMOS output buffer by using modified LVTSCR devices with high trigger current

IEEE Journal of Solid-State Circuits

Volumn 32, Issue 8, 1997, Pages 1293-1296

  Ker, Ming Dou ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

ESD; Latchup; LVTSCR; Noise margin

Indexed keywords

BUFFER CIRCUITS; ELECTRIC DISCHARGES; ELECTRIC EQUIPMENT PROTECTION; SEMICONDUCTOR DIODES; SOLID STATE RECTIFIERS; SPURIOUS SIGNAL NOISE; TRANSISTORS; TRIGGER CIRCUITS;

LOW VOLTAGE TRIGGERING SEMICONDUCTOR CONTROLLED RECTIFIER (LVTSCR);

CMOS INTEGRATED CIRCUITS;

EID: 0031207022     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.604093     Document Type: Article

References (14)

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