High rate deposited amorphous silicon nitride for the hydrogenated amorphous silicon thin-film transistor structures

Materials Research Society Symposium - Proceedings

Volumn 424, Issue , 1996, Pages 43-51

  Li, Tong ^a   Chen, Chun ying ^a   Malone, Charles T ^a   Kanicki, Jerzy ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; HYDROGENATION; OPTICAL PROPERTIES; PLASMA APPLICATIONS; THIN FILM TRANSISTORS; THIN FILMS;

HYDROGENATED AMORPHOUS SILICON NITRIDE THIN FILMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

SILICON NITRIDE;

EID: 0030422379     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-424-43     Document Type: Conference Paper

References (13)