|
Volumn 359, Issue 1-3, 1996, Pages 122-134
|
STM study of hydrogen exposure of the Si(111)√3 × √3-In surface
|
Author keywords
Chemisorption; Hydrogen; Indium; Low index single crystal surfaces; Scanning tunneling microscopy; Silicon; Surface relaxation and reconstruction
|
Indexed keywords
CHEMISORPTION;
HYDROGEN;
INDIUM;
MATHEMATICAL MODELS;
SCANNING TUNNELING MICROSCOPY;
SILICON;
SINGLE CRYSTALS;
STACKING FAULTS;
HYDROGEN EXPOSURE;
ISLANDS;
LOW INDEX SINGLE CRYSTAL SURFACES;
SURFACE RECONSTRUCTION;
SURFACE RELAXATION;
WEAK CORRUGATION;
SURFACE STRUCTURE;
|
EID: 0030194239
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/0039-6028(96)00368-8 Document Type: Article |
Times cited : (28)
|
References (39)
|