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Volumn 359, Issue 1-3, 1996, Pages 122-134

STM study of hydrogen exposure of the Si(111)√3 × √3-In surface

Author keywords

Chemisorption; Hydrogen; Indium; Low index single crystal surfaces; Scanning tunneling microscopy; Silicon; Surface relaxation and reconstruction

Indexed keywords

CHEMISORPTION; HYDROGEN; INDIUM; MATHEMATICAL MODELS; SCANNING TUNNELING MICROSCOPY; SILICON; SINGLE CRYSTALS; STACKING FAULTS;

EID: 0030194239     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00368-8     Document Type: Article
Times cited : (28)

References (39)
  • 1
    • 85136563842 scopus 로고    scopus 로고
    • note
    • 2.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.