Lossless InAsP-InGaP modulator at 1.3 μm for optical conversion of radio signals up to 40 GHz

IEEE Photonics Technology Letters

Volumn 9, Issue 7, 1997, Pages 931-933

  Devaux, F ^a   Ougazzaden, A ^a   Huet, F ^a   Carre M ^a  

^a ORANGE LABS   (France)

Author keywords

Electrooptics materials devices; Integrated optoelectronics; Millimeter wave radio communications; Semiconductor device measurements; Semiconductor optical amplifier

Indexed keywords

AMPLIFICATION; BANDWIDTH; ELECTRIC VARIABLES MEASUREMENT; ELECTROOPTICAL DEVICES; ELECTROOPTICAL EFFECTS; INTEGRATED OPTOELECTRONICS; LIGHT EXTINCTION; MILLIMETER WAVES; RADIO COMMUNICATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS;

ELECTROABSORPTION MODULATORS;

LIGHT MODULATORS;

EID: 0031188717     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.593354     Document Type: Article

References (6)

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3. K. K. Loi, I. Sakamoto, X. B. Mei, C. W. Tu, and W. S. C. Chang, "High-efficiency 1.3 μm InAsP-GaInP MQW electroabsorption waveguide modulators for microwave fiber-optic links." IEEE Photon. Technol. Lett., vol. 8, pp. 626-628, 1996.
4. K. Wakita, I. Kotaka, T. Amano, and H. Sugiura, "1.3 μm waveguided clectroabsorption modulators with strain compensated InAsP/InGaP MQW structures." Electron. Lett., vol. 31, pp. 1339-1341, 1995.
5. A. Ougazzaden, F. Devaux, E. V. K. Rao, L. Silvestre, and G. Patriarche, "1.3 μm strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal organic vapor epitaxy," Appl. Phys. Lett., vol. 70, pp. 96-98, 1997.
6. F. Devaux, N. Souli, A. Ougazzaden, F. Huet, and M. Carré, "High-speed tandem of MQW modulators for coded pulse generation with 14-dB fiber-to-fiber gain," IEEE Photon. Technol. Lett., vol. 8, pp. 218-220, 1996.