High-efficiency 1.3 μm InAsP-GaInP MQW electroabsorption waveguide modulators for microwave fiber-optic links

IEEE Photonics Technology Letters

Volumn 8, Issue 5, 1996, Pages 626-628

  Loi, K K ^a,b   Sakamoto, I ^c   Mei, X B ^b   Tu, C W ^a,b   Chang, W S C ^a,b  

^a IEEE

^b UNIVERSITY OF CALIFORNIA   (United States)

^c MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; OPTICAL FIBER COUPLING; OPTICAL LINKS; OPTICAL WAVEGUIDES; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SOLID STATE LASERS;

HIGH EFFICIENCY ELECTROABSORPTION WAVEGUIDE MODULATORS; MICROWAVE FIBER OPTIC LINKS; OPTICAL CARRIER POWER; RIDGE WAVEGUIDES;

LIGHT MODULATORS;

EID: 0030150115     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.491560     Document Type: Article

References (5)

1. D. Kasemset, E. Ackerman, and S. Wanuga, "A comparison of alternative modulation techniques for microwave optical links," in SPIE Proc., vol. 1371, 1990, pp. 104-114.
2. F. Devaux, P. Bordes, A. Ougazzaden, M. Carré, and F. Huet, "Experimental optimization of MQW electroabsorption modulators with up to 40 GHz bandwidths," Electron. Lett., vol. 30, no. 16, pp. 1347-1348, Aug. 1994.
3. O. Mitomi, I. kotaka, K. Wakita, S. Nojima, K. Kawano, Y. Kawamura, and H. Asai, "40 GHz bandwidth InGaAs/InAlAs multiple quantum well optical intensity modulator," Appl. Opt., vol. 31, no. 12, pp. 2030-2035, Apr. 1992.
4. X. B. Mei, K. K. Loi, H. H. Wieder, W. S. C. Chang, and C. W. Tu, "Strain-compensated InAsP/GaInP multiple quantum wells for 1.3 μm waveguide modulators," Appl. Phys. Lett., vol. 68, no. 1, pp. 90-92, Jan. 1996.
5. K. K. Loi, I. Sakamoto, X. F. Shao, H. Q. Hou, H. H. Liao, X. B. Mei, A. N. Cheng, and W. S. C. Chang, "Accurate de-embedding technique for on-chip small-signal characterization of high frequency optical modulator," IEEE Photon. Technol. Lett., vol. 8, no. 3, pp. 402-404, Mar. 1996.