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1
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3743107931
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Electroabsorption modulator for a 20 Gb/s soliton transmission experiment over 1 million km with 140 km amplifier span
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Hong Kong: Chinese Univ. Press
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G. Aubin, E. Jeanney, T. Montalant, J. Moulu, F. Pirio, J.-B. Thomine, and F. Devaux, "Electroabsorption modulator for a 20 Gb/s soliton transmission experiment over 1 million km with 140 km amplifier span," Proc. Tenth Int. Conf. Integrated Optics (IOOC-95), Hong Kong: Chinese Univ. Press, vol. 5, pp. 29-30, 1995.
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Aubin, G.1
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Thomine, J.-B.6
Devaux, F.7
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2
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0028547780
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Very simple approach for high performance DFB laser-electroabsorption modulator monolithic integration
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A. Ramdane, A. Ougazzaden, F. Devaux, F. Delorme, M. Schneider, and J. Landreau, "Very simple approach for high performance DFB laser-electroabsorption modulator monolithic integration," Electron. Lett., vol. 30, no. 23, pp. 1980-1981, 1994.
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Ramdane, A.1
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Schneider, M.5
Landreau, J.6
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3
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0039471614
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Zero-loss quantum well waveguide Mach-Zehnder modulator at 1.55 μm
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J. E. Zucker, K. L. Jones, B. I. Miller, M. G. Young, U. Koren, J. D. Evankow, and C. A Burrus, "Zero-loss quantum well waveguide Mach-Zehnder modulator at 1.55 μm," Appl. Phys. Lett., vol. 60, no. 3. pp. 277-279, 1992.
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4
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0029324251
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20 Gb/s high performance MQW TANDEM for soliton generation and coding
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N. Souli, F. Devaux, A. Ramdane, P. Krauz, A. Ougazzaden, F. Huet, M. Carré, Y. Sorel, J. F. Kerdiles, and M. Henry, "20 Gb/s high performance MQW TANDEM for soliton generation and coding," Photon. Technol. Lett., vol. 7, no. 6, pp. 629-631, 1995.
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Souli, N.1
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Huet, F.6
Carré, M.7
Sorel, Y.8
Kerdiles, J.F.9
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5
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0026946665
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Highly thermally stable, high-performance InGaAsP.-InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE
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A. Mircá, A. Ougazzaden, G. Primot, and C. Kazmierski, "Highly thermally stable, high-performance InGaAsP.-InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE," J. Crystal Growth, vol. 124, p. 737-740, 1992.
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Mircá, A.1
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Primot, G.3
Kazmierski, C.4
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6
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0345351540
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An ultra-high-speed (50 GHz) MQW electro-absorption modulator with waveguides for 40 Gb/s optical modulation
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Hong Kong: Chinese Univ. Press
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T. Ido, S. Tanaka, M. Suzuki, and H. Inoue, "An ultra-high-speed (50 GHz) MQW electro-absorption modulator with waveguides for 40 Gb/s optical modulation," Proc. Tenth Int. Conf. Integrated Optics (IOOC-95), Hong Kong: Chinese Univ. Press, vol. 5, pp. 1-2, 1995.
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Ido, T.1
Tanaka, S.2
Suzuki, M.3
Inoue, H.4
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7
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0026881074
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InGaAsP electroabsorption modulator for high bit rate EDFA system
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M. Suzuki, H. Tanaka, and Y. Matsushima, "InGaAsP electroabsorption modulator for high bit rate EDFA system," Photon. Technol. Lett., vol. 4. no. 6, pp. 586-588, 1992.
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Suzuki, M.1
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8
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0028539394
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On the transmission performances and chirp parameter of a multiple-quantum-well electroabsorption modulator
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F. Dorgeuille and F. Devaux, "On the transmission performances and chirp parameter of a multiple-quantum-well electroabsorption modulator," J. Quantum Electron., vol. 30, no. 18, pp. 2562-2572, 1994.
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Dorgeuille, F.1
Devaux, F.2
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9
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0028430556
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Strain compensated MQW electroabsorption modulator for increased optical power handling
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I. K. Czaijkowski, M. A. Gibbon, G. H. B. Thompson, P. D. Greene, A. D. Smith, and M. Silver, "Strain compensated MQW electroabsorption modulator for increased optical power handling," Electron. Lett., vol. 30, no. 11, pp. 900-901, 1994.
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Czaijkowski, I.K.1
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Greene, P.D.4
Smith, A.D.5
Silver, M.6
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10
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4243186068
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InGaAsP MQW electroabsorption modulators with tensile strained barriers
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San Diego, CA, Opt. Soc. Amer.
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R. Sahara, K. Morito, Y. Kataki, H. Soda, and N. Okazaki, "InGaAsP MQW electroabsorption modulators with tensile strained barriers," in Proc. OFC'95, San Diego, CA, Opt. Soc. Amer., 1995, pp. 219-220.
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Sahara, R.1
Morito, K.2
Kataki, Y.3
Soda, H.4
Okazaki, N.5
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11
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0029342430
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Electroabsorption modulators for high bit rate optical communications: A comparison of strained InGaAs/InAlAs and InGaAsP/InGaAsP MQW
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F. Devaux, S. Chelles, A. Ougazzaden, A. Mircéa, and J. C. Harmand, "Electroabsorption modulators for high bit rate optical communications: a comparison of strained InGaAs/InAlAs and InGaAsP/InGaAsP MQW," Semiconduct. Sci. Technol., vol. 10, pp. 887-901, 1995.
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Devaux, F.1
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Mircéa, A.4
Harmand, J.C.5
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12
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0028403477
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Comparison of photoconductive response times of InGaAs/InAlAs and InGaAsP/InGaAsP multiple-quanrum-well waveguide modulators
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Our measurements and D. J. Moss, M. Aoki, H. Sano, "Comparison of photoconductive response times of InGaAs/InAlAs and InGaAsP/InGaAsP multiple-quanrum-well waveguide modulators," Jpn.J.Appl.Phys., vol. 33, pp. 328-331, 1994.
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Moss, D.J.1
Aoki, M.2
Sano, H.3
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