Growth of ZnSe on GaAs (1 1 0) substrates and cleavage-induced GaAs (1 1 0) surfaces

Journal of Crystal Growth

Volumn 178, Issue 3, 1997, Pages 252-257

  Zhang, Baoping ^a   Yasuda, Takashi ^a   Segawa, Yusaburo ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

High index surfaces; II VI compounds; MBE

Indexed keywords

ELECTRON TRANSITIONS; EXCITONS; FILM GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES; SURFACE STRUCTURE; THERMAL EFFECTS;

CLEAVAGE INDUCED SURFACES; HIGH INDEX SURFACES; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031186207     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01167-0     Document Type: Article

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