Molecular beam epitaxy of ZnSe films and ZnCdSe/ZnSe quantum wells on cleavage-induced (110) surfaces

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 4 A, 1996, Pages

  Zhang, B ^a   Yasuda, T ^a   Yasui, T ^a   Segawa, Y ^a  

^a Institute of Physical and Chemical Research   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL PROPERTIES; SEMICONDUCTING FILMS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES;

ZINC SELENIDE FILMS;

MOLECULAR BEAM EPITAXY;

EID: 0030121537     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l432     Document Type: Article

References (13)