CdTe quantum wires achieved by strain-induced lateral confinement

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 418-424

  Mariette, H ^a   Brinkmann, D ^a   Fishman, G ^a   Gourgon, C ^a   Dang, Le Si ^a   Loffler A ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; EPITAXIAL GROWTH; LATTICE CONSTANTS; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

CADMIUM TELLURIDE QUANTUM WIRE; ENERGY SHIFT; EXCITATION DENSITY; PIEZOELECTRIC FIELD; STRAIN INDUCED LATERAL CONFINEMENT; STRAIN MODULATED STRUCTURE; WIRE EXCITON TRANSITION ENERGY;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0030562432     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00800-4     Document Type: Article

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