Low threshold room temperature continuous wave operation of 1.3μm GaInAsP/InP strained layer murtiquantum well surface emitting laser

Electronics Letters

Volumn 32, Issue 11, 1996, Pages 1011-1013

  Uchiyama, S ^a   Yokouchi, N ^a   Ninomiya, T ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

Semiconductor junction lasers; Semiconductor quantum wells; Vertical cavity surface emitting lasers

Indexed keywords

ELECTRIC CURRENTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR JUNCTION LASERS; THRESHOLD CURRENTS; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030142820     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960676     Document Type: Article

References (9)

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