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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 7 SUPPL. B, 1997, Pages 4752-4755

Surface reaction kinetics of CH3 in CH4 RF discharge studied by time-resolved threshold ionization mass spectrometry

(4) Shiratani, Masaharu a,b Jolly, Jacques a Videlot, Hervé a Perrin, Jérôme a,c

a CNRS (France)

b KYUSHU UNIVERSITY (Japan)

c Balzers Process Systems (France)

Author keywords

Methane; Plasma enhanced chemical vapour deposition; RF discharge; Surface loss probability; Thin film growth; Threshold ionization mass spectrometry

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC DISCHARGES; FILM GROWTH; FREE RADICAL REACTIONS; IONIZATION OF GASES; MASS SPECTROMETRY; METHANE; OLEFINS; PLASMA APPLICATIONS; REACTION KINETICS; SURFACE PHENOMENA; THIN FILMS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); SURFACE LOSS PROBABILITY; TIME RESOLVED THRESHOLD IONIZATION MASS SPECTROMETRY;

PLASMA INTERACTIONS;

EID: 0031177619 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.4752 Document Type: Article

Times cited : (41)

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