Submicron P-channel (Al,Ga)As/(In,Ga)As Higfet's

IEEE Transactions on Electron Devices

Volumn 44, Issue 7, 1997, Pages 1040-1045

  Abrokwah, Jonathan K ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE;

HIGFET DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 0031176911     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.595929     Document Type: Article

References (7)

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2. J. Hallmark, C. Shurboff, W. Ooms, R. Lucero, J. Abrokwah, and J. Huang, "0. 9 V DSP blocks: A 15 ns 4K SRAM and a 45 ns 16-bit multiply/accumulator," in 1994 IEEE GaAs 1C Symp. Tech. Dig. p. 55.
3. J. Abrokwah, J. Huang, W. Ooms, C. Shurboff, J. Hallmark, R. Lucero, J. Gilbert, B. Bernhardt, and G. Hansell, "A manufacturable complementary GaAs process," in 1993 GaAs 1C Symp. Tech. Dig. , pp. 127-130.
4. D. E. Grider, P. P. Rüden, J. C. Nohava, I. R. Mactaggart, J. J. Stronczer, and R. H. Tan, "0. 7-//m gate length complementary Alo. 75Gao. 25As/Ino. 25Gao. 75As/GaAs HIGFET technology for highspeed/low-power digital circuits," in 1992 IEDM Dig. , pp. 331-334.
5. C. Shurboff, J. Abrokwah, B. Bernhardt, R. Lucero, and J. Hallmark, Motorola Int. Rep. , unpublished.
6. F. Smith, "Device applications of low-temperature grown GaAs," in Mat. Res. Soc. Symp. Proc. , vol. 1, p. 241, 1992.
7. R. Anholt, "Gateway modeling," Minneapolis, MN, private communication.