Manufacturable complementary GaAs process

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1993, Pages 127-130

  Abrokwah, J K ^a   Huang, J H ^a   Ooms, W ^a   Shurboff, C ^a   Hallmark, J A ^a   Lucero, R ^a   Gilbert, J ^a   Bernhardt, B ^a   Hansell, G ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIGITAL CIRCUITS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; OSCILLATORS (ELECTRONIC); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SUBSTRATES; VLSI CIRCUITS;

COMPLEMENTARY GALLIUM ARSENIDE PROCESS; EPITAXIAL WAFERS; HETEROSTRUCTURE; TRANSCONDUCTANCE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0027879757     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)