0.7 micron gate length complementary Al0.75Ga0.25As/In0.25Ga0.75As/GaAs HIGFET technology for high speed/low power digital circuits

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 331-334

  Grider, D E ^a   Ruden, P P ^a,b   Nohava, J C ^a   Mactaggart, I R ^a   Stronczer, J J ^a   Tran, R H ^a,b  

^a Honeywell SAC ^*  (United States)

^b UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TIMING CIRCUITS;

CLOCK FREQUENCY; GATE LENGTH; HIGH SPEED; STANDBY POWER CONSUMPTION; SUBMICRON; SUBMICRON GATE; SWITCHING POWER; SWITCHING SPEED;

FIELD EFFECT TRANSISTORS;

EID: 33746967176     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307372     Document Type: Conference Paper

References (7)

1. D. E. Grider, P. P. Ruden, J. C. Nohava, I. R. Mactaggart, J. J. Stronczer, T. E. Nohava, and S. S. Swirhun, "Delta-Doped Complementary Heterostructure FETs With High y-Value Pseudomorphic InyGa. yAs Channels For Ultra-Low-Power Digital IC Applications", 1991 IEDM Tech. Digest, 983 (1991).
2. D. E. Grider, I. R. Mactaggart, J. C. Nohava, J. J. Stronczer, P. P. Ruden, T. E. Nohava, D. Fulkerson, and D. E. Tetzlaff, "A 4 KBit Synchronous Static Random Access Memory Based Upon Delta-Doped Complementary Heterostructure Insulated Gate Field Effect Transistor Technology", 1991 GaAs IC Symposium Tech. Digest, 71 (1991).
3. A. I. Akinwande, P. P. Ruden, D. E. Grider, J. C. Nohava, T. E. Nohava, P. D. Joslyn, and J. E. Breezley, "Complementary lll-V Heterostructure FETs for Low Power Integrated Circuits", 1990 IEDM Tech. Digest, 90-983 (1990).
4. D. E. Grider, A. I. Akinwande, R. Mactaggart, P. P. Ruden, J. C. Nohava, T. E. Nohava, J. E. Breezley, P. Joslyn, and D. Tetzlaff, "Development of Static Random Access Memories Using Complementary Heterostructure Insulated Gate Field Effect Transistor Technology", D. E. Grider, A. I. Akinwande, 1990 GaAs IC Symp. Tech. Digest, 143 (1990).
5. P. P. Ruden, M. Shur, D. K. Arch, R. R. Daniels, D. E. Grider, and T. E. Nohava, "Quantum-Well p-Channel AIGaAs/lnGaAs/GaAs Heterostructure Insulated Gate Field Effect Transistors", IEEE Trans. Electron Devices EH3S, 2371 (1989).
6. P. P. Ruden, A. I. Akinwande, D. Narum, D. E. Grider, J. Nohava, "High Performance Complementary Logic Based on GaAs/lnGaAs/AIGaAs HIGFETs", EDM Tech. Digest, 89 (1989).
7. D. E. Grider, R. D. Horning, D. K. Arch, P. P. Ruden, T. E. Nohava, D. N. Narum, and R. R. Daniels, "Study of Strain in Pseudomorphic InGaAs Heterostructures Related to the Enhanced Performance of p-channel Heterostructure FET Devtces", J. Vac. Sci. Technol. BZ. 371 (1989).