Highly phosphorus-doped polysilicon films with low tensile stress for surface micromachining using pocl3 diffusion doping

Sensors and Actuators, A: Physical

Volumn 61, Issue 1-3, 1997, Pages 374-378

  Elbrecht, L ^a   Catanescu, R ^a   Zacheja, J ^b   Binder, J ^a  

^a UNIVERSITY OF BREMEN   (Germany)

^b Section for Microsystem Technology ^*  (Germany)

Author keywords

Phosphorus oxychloride; Polysilicon films; Surface micromachining

Indexed keywords

MICROMACHINING; PHOSPHORUS COMPOUNDS; POLYCRYSTALLINE MATERIALS; RESIDUAL STRESSES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; STRESS ANALYSIS; SURFACE TREATMENT;

PHOSPHORUS OXYCHLORIDE; POLYSILICON FILMS;

SEMICONDUCTING FILMS;

EID: 0031167488     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)80292-0     Document Type: Article

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