Development of surface micromachining techniques compatible with on-chip electronics

Journal of Micromechanics and Microengineering

Volumn 6, Issue 2, 1996, Pages 197-211

  French, P J ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRONICS INDUSTRY; ETCHING; MICROELECTROMECHANICAL DEVICES; MICROELECTRONIC PROCESSING; SILICON WAFERS; SUBSTRATES; THIN FILMS;

MECHANICAL STRUCTURES; MICROMECHANICAL LAYER; ONCHIP ELECTRONICS; PATTERNING; SACRIFICIAL ETCHING; SURFACE MICROMACHINING;

MICROMACHINING;

EID: 0030156440     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/6/2/001     Document Type: Review

References (72)

1. Bean K E 1978 Anisotropic etching of silicon IEEE Trans. Electron Devices 25 1185-93
2. Petersen K E 1982 Silicon as a mechanical material Proc. IEEE 70 420-57
3. Nathanson H C and Wickstrom R A 1965 A resonant-gate silicon surface transistor with high-Q band pass properties Appl. Phys. Lett. 7 84
4. Nathanson H C, Newell W E, Wickstrom R A and Davis J R Jr 1967 The resonant gate transistor IEEE Trans. Electron Devices 14 117-33
5. Thomas R N, Guldberg J, Nathanson H C and Malmberg P R 1975 The mirror matrix tube: a novel light valve for projection displays IEEE Trans. Electron Devices 22 765
6. Howe R T and Muller R S 1983 Polycrystalline and amorphous silicon micromechanical beams: annealing and mechanical properties Sensors Actuators 4 447-54
7. Fan L-S, Tai Y-C and Muller R S 1987 Pin joints, gears, springs, cranks and other novel micromechanical structures Proc. 4th Int. Conf. on Solid-state Sensors and Actuators (Tokyo) (New York: IEEE) pp 849-52
8. Gabriel K J, Trimmer W S N and Mehregany M 1987 Microgears and turbines etched from silicon Proc. 4th Int. Conf. on Solid-state Sensors and Actuators (Tokyo) (New York: IEEE) pp 853-6
9. Wolffenbuttel M R, Li Y X, Poenar D, French P J, Regtien P P L and Wolffenbuttel R F 1993 Multilayer membranes for a tactile imaging sensor, using surface micromachining and RIE Proc. 7th Int. Conf. on Solid-state Sensors and Actuators (Yokohama) (New York: IEEE) pp 284-7
10. van Drieënhuizen B P, French P J, Li Y X, Poenar D and Wolffenbuttel R F 1994 Integrated capacitive rms to dc converter based on surface micromachining technology Proc. Eurosensors '94 (Toulouse) p 443
11. Ristic Lj 1989 CMOS technology: a base for micromachining Microelectron. J. 20 153
12. Baltes H 1993 CMOS as a sensor technology Sensors Actuators A 37-38 51-6
13. Nanver L K, Goudena E J G and van Zeijl H W 1993 DIMES-01 baseline BiFET process for smart sensor experimentation Sensors Actuators A 36 139-47
14. Sarro P M 1992 Sensor technology strategy in silicon Sensors Actuators A 31 138-43
15. Mahmoud K M and Wolffenbuttel R F 1992 Compatibility between bipolar read-out electronics and microstructures in silicon Sensors Actuators A 31 188-99
16. van Drieënhuizen B P, Goosen J F L, French P J, Li Y X, Poenar D and Wolffenbuttel R F 1994 Surface micromachined module compatible with BiFET electronic processing Proc. Eurosensors '94 (Toulouse) p 108
17. Ataka M, Omodaka A and Fujita H 1993 A biomimetic micromotion system - a ciliary motion system Proc. 7th Int. Conf. on Solid-state Sensors and Actuators (Yokohama) (New York: IEEE) pp 38-41
18. Shimaoka K, Tabata O, Kimura M and Sugiyama S 1993 Micro-diaphragm pressure sensor using polysilicon sacrificial layer etch-stop technique Proc. 7th Int. Conf. on Solid-state Sensors and Actuators (Yokohama) (New York: IEEE) pp 632-5
19. Tabata O, Asahi R, Fujitsuka N, Kimura M and Sugiyama S 1993 Electrostatic driven optical chopper using SOI wafer Proc. 7th Int. Conf. on Solid-state Sensors and Actuators (Yokohama) (New York: IEEE) pp 124-7
20. Diem B, Rey P, Renard S, Bosson V S, Bono H, Michel F, Delaye M T and Delapierre G 1995 SOI 'SIMOX' from bulk to surface micromachining, a new age for silicon sensors and actuators Sensors Actuators A 46-47 8-26
21. Grétillat M-A, Linder C and de Rooij R 1993 Multilayer N F polysilicon resonators including shielding for excitation and detection Proc. 7th Int. Conf. on Solid-state Sensors and Actuators (Yokohama) (New York: IEEE) pp 292-5
22. Poenar D, French P J, Mallée R, Sarro P M and Wolffenbuttel R F 1994 PSG for surface micromachining Sensors Actuators 41 pp 304-9
23. Monk D J, Soane D S and Howe R T 1993 Enhanced removal of sacrificial layers for silicon surface micromachining Proc. 7th Int. Conf. on Solid-state Sensors and Actuators (Yokohama) (New York: IEEE) pp 280-3
24. Ozawa K, Takagi N and Asama K 1983 Effect of deposition conditions on intrinsic stress in a-Si:H films Japan. J. Appl. Phys. 22 767-70
25. Guckel H, Randazzo T and Burns D W 1985 A simple technique for the determination of mechanical strain in thin films with applications to polysilicon J. Appl. Phys. 57 1671-5
26. Allen M G, Mehregany M, Howe R T and Senturia S D 1987 Microfabrication structures for the in situ measurement of residual stress, Young's modulus, and ultimate strain of thin films Appl. Phys. Lett. 51 241-3
27. van Drieënhuizen B P, Goosen J F L, French P J and Wolffenbuttel R F 1993 Comparison of techniques for measuring both compressive and tensile stress in thin films Sensors Actuators A 37 756-65
28. Onuma Y and Sekiya K 1974 Piezoresistive properties of polycrystalline silicon thin films Japan. J. Appl. Phys. 11 420-1
29. Seto J Y W 1975 The electrical properties of polycrystalline silicon films J. Appl. Phys. 46 5247-54
30. Mandurah M M, Saraswat K C and Kamins T I 1981 A model for conduction in polysilicon: Part 1 - Theory, Part 2 - Comparison of theory and experiment IEEE Trans. Electron Devices 28 1163-76
31. Mikoshiba H 1981 Stress-sensitive properties of silicon gate MOS devices Solid State Electron. 24 221-32
32. French P J and Evans A G R 1989 Piezoresistance in polysilicon and its applications to strain gauges Solid State Electron. 32 1-10
33. Murarka S P and Retajczyk T F Jr 1983 Effect of phosphorus doping on stress in silicon and polycrystalline silicon J. Appl. Phys. 54 2069-72
34. Guckel H, Burns D W, Rutigliano C R, Showers D K and Uglow J 1987 Fine grained polysilicon and its application to planar pressure transducers Proc. 4th Int. Conf. on Solid-state Sensors and Actuators (Tokyo) (New York: IEEE) p 277
35. Hajab R S and Muller R S 1989 Residual strain effects on large aspect ratio micro-diaphragms Proc. IEEE Microelectromechanical Systems Conf. (MEMS) (Salt Lake City, UT) (New York: IEEE) pp 133-8
36. Yang K L, Wolcoxen D and Gimpelson G 1989 The effects of post-processing techniques and sacrificial layer materials on the formation of free standing polysilicon microstructures Proc. IEEE Microelectromechanical Systems Conf. (MEMS) (Salt Lake City, UT) (New York: IEEE) pp 66-70
37. Guckel H, Sniegowski J J, Christenson T R, Mohney S and Kelly T F 1990 Fabrication of micromechanical devices from polysilicon films with smooth surfaces Sensors Actuators 20 117-22
38. French P J, van Drieënhuizen, Poenar D, Goosen J F L, Sarro P M and Wolffenbuttel R F 1993 Low-stress polysilicon process compatible with standard device processing Sensors VI: Technology, Systems and Applications (Manchester, 1993) (Bristol: Institute of Physics Publishing) pp 129-33
39. Fan L S and Muller R S 1988 As-deposited low-strain LPCVD polysilicon Proc. IEEE Solid State Sensor and Actuator Workshop (Hilton Head Island, SC) (New York: IEEE) pp 55-8
40. Krulevitch P, Nguyen Tai D, Johnson G C, Howe R T, Wenk H R and Gronsky R 1991 LPCVD polycrystalline silicon thin films: the evolution of structure, texture and stress Mater. Res. Symp. Proc. 202 167-72
41. Krulevitch P, Johnson G C and Howe R T 1992 Stress and microstructure in LPCVD polysilicon films: experimental results and closed form modeling of stresses Mater. Res. Soc. Proc. 239 13-18
42. Putty M W, Chang S-C, Howe R T, Robinson A L and Wise K D 1989 Process integration for active polysilicon resonant microstructures Sensors Actuators 20 143-51
43. Ristic Lj, Kniffin M L, Gutteridge R and Hughes H G 1992 Properties of polysilicon films annealed by a rapid thermal annealing process Thin Solid Films 220 106-10
44. French P J, van Drieënhuizen B P, Poenar D, Goosen J F L, Mallée R and Sarro P M 1996 The development of a low-stress polysilicon process compatible with standard device processing J. Microelectromech. Syst. at press
45. Orpana M and Korhonen A O 1991 Control of residual stress of polysilicon thin films by heavy doping in surface micromachining Proc. 6th Int. Conf. on Solid-state Sensors and Actuators (San Francisco, CA) (New York: IEEE) pp 957-60
46. + silicon films Sensors Actuators A 21-23 866-71
47. Maier-Schneider D, Maibach J, Obermeier E and Schneider D 1995 Variations in Young's modulus and intrinsic stress of LPCVD-polysilicon due to high-temperature annealing J. Micromech. Microeng. 5 121-4
48. Koskinen J, Steinwall J E, Soave R and Johnson H H 1993 Microtensile testing of free-standing polysilicon fibers of various grain sizes J. Micromech. Microeng. 3 13-17
49. Sekimoto M, Yoshihara H and Ohkubo T 1982 Silicon nitride single-layer x-ray mask J. Vac. Sci. Technol. 21 1017-21
50. French P J, Sarro P M, Mallée R and Wolffenbuttel R F 1994 Optimization of a low stress silicon nitride process for surface micromachining applications Proc. Eurosensors '94 (Toulouse) p 205
51. 4 films on silicon Japan. J. Appl. Phys. 11 1097-105
52. Li Y X, Wolffenbuttel M R, French P J, Laros M, Sarro P M and Wolffenbuttel R F 1994 Reactive ion etching (RIE) techniques for micromachining applications Sensors Actuators A 41 317-23
53. Fischer M, Nagele M, Eichner D, Schöllhorn C and Strobel R 1996 Integration of surface micromachined polysilicon mirrors and standard CMOS process Sensors Actuators at press
54. (54] Kuehnel W and Sherman S J 1994 A surface micromachined silicon accelerometer with on-chip detection circuitry Sensors Actuators A 45 7-16
55. French P J and Wolffenbuttel R F 1993 Reflow of BPSG for sensor applications J. Micromech. Microeng. 3 1-3
56. Adams A C 1981 Plasma plananzation Solid State Technol. 24 178-81
57. Li Y X, French P J and Wolffenbuttel R F 1995 Plasma plananzation for sensor applications J. Microelectromech. Syst. 4 132-8
58. Roberts B 1992 Chemical mechanical plananzation Proc. IEEE/SEMI Advanced Semiconductor Manufacturing Conf. and Workshop (Cambridge, MA) (New York: IEEE) pp 206-10
59. Bartek M, French P J and Wolffenbuttel R F 1994 Planarization in surface micromachining using selective epitaxial growth Proc. Eurosensors '94 (Toulouse) p 210
60. Bartek M, Li Y X, Gennissen P, French P J and Wolffenbuttel R F 1994 Epitaxial layer optimization for smart silicon sensors by placing read-out electronics in SEG silicon Proc. Eurosensors '94 (Toulouse) p 213
61. Bustillo J M, Fedder G K, Nguyen C T-C and Howe R T 1994 Process technology for the modular integration of CMOS and polysilicon microstructures Microsyst. Technol. 1 30-41
62. 2 wet etching for micromachining applications Proc. 6th Int. Conf. on Solid-state Sensors and Actuators (San Francisco, CA) (New York: IEEE) pp 647-50
63. Monk D J, Soane D S and Howe R T 1992 A diffusion reaction model for HF etching of LPCVD phosphosilicate glass sacrificial layer Proc. IEEE Solid State Sensor and Actuator Workshop (Hilton Head Island, SC) (New York: IEEE) pp 47-51
64. Monk D J, Soane D S and Howe R T 1993 Determination of the etching kinetics for the hydrofluoric acid/silicon dioxide system J. Electrochem. Soc. 140 2339-45
65. Scheeper P R, Voorthuijzen J A, Olhuis W and Bergveld P 1992 Investigation of attractive forces between silicon nitride microstructures and an oxidized substrate Sensors Actuators A 30 231-9
66. Mastrangelo C H and Hsu C H 1993 Mechanical stability and adhesion of microstructures under capillary forces - part I: Basic theory; part II: Experimental J. Microelectromech. Syst. 2 33-55
67. Kobayashi D, Kim C-J and Fujita H 1993 Photoresist-assisted release of moveable structures Proc. 7th Int. Conf. on Solid-state Sensors and Actuators (Yokohama) (New York: IEEE) pp 14, 15
68. Alley R L, Mai P, Komvopoulos K and Howe R T 1993 Surface roughness modification of interfacial contacts in polysilicon microstructures Proc. 7th Int. Conf. on Solid-state Sensors and Actuators (Yokohama) (New York: IEEE) pp 288-91
69. Yee Y, Chun K and Lee J D 1995 Polysilicon surface modification technique to reduce sticking of microstructures Proc. 7th Int. Conf. on Solid-state Sensors and Actuators (Stockholm) (New York: IEEE) pp 206-9
70. Mulhern G T, Soane D S and Howe R T 1993 Supercritical carbon dioxide drying of microstructures Proc. 7th Int. Conf. on Solid-state Sensors and Actuators (Yokohama) (New York: IEEE) pp 296-9
71. Legtenberg R and Tilmans H A C 1994 Electrostatically driven vacuum-encapsulation polysilicon resonators: Part 1. Design and fabrication Sensors Actuators A 45 57-66
72. Abe T, Messner W C and Reed M L 1995 Effective methods to prevent suction during post-release-etch process Proc. IEEE Microelectromechanical Systems Conf. (MEMS) (Amsterdam) (New York: IEEE) pp 94-9