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Thin Solid Films

Volumn 276, Issue 1-2, 1996, Pages 310-313

Characterization of silicon-implanted SiO2 layers using positron annihilation spectroscopy

(9) Ghislotti, G a Nielsen, B a Asoka Kumar, P a Lynn, K G a Szeles, C a Bottani, C E b Bertoni, S c Cerofolini, G F c Meda, L c

a BROOKHAVEN NATIONAL LABORATORY (United States)

b POLITECNICO DI MILANO (Italy)

c Istituto Guido Donegani SpA (Italy)

Author keywords

Ion implantation; Silicon; Silicon dioxide; Transmission electron microscopy

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); ION IMPLANTATION; NANOSTRUCTURED MATERIALS; SILICON; SPECTROSCOPIC ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

POSITRON ANNIHILATION SPECTROSCOPY;

SILICA;

EID: 0030120570 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/0040-6090(95)08105-4 Document Type: Article

Times cited : (3)

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