SCOPUS 정보 검색 플랫폼

Volumn 164, Issue 1-4, 1996, Pages 425-429

Influence of H2 on electrical and optical properties of carbon-doped InP grown by MOMBE using tertiarybutylphosphine (TBP)

(4) Oh, Je Hwan a Fukuchi, Fumihiko a Kang, Ho Cheol a Konagai, Makoto a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; DECOMPOSITION; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; HYDROGEN; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

CARBON DONOR; DIRECT BEAM CRACKING; ELECTRON CONCENTRATION; TERTIARYBUTYLPHOSPHINE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030193401 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(96)00015-2 Document Type: Article

Times cited : (4)

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