Reliability evaluation of manufacturing processes for bipolar and MOS devices on silicon-on-diamond materials

Journal of the Electrochemical Society

Volumn 143, Issue 4, 1996, Pages 1326-1334

  Edholm, Bengt ^a   Söderbärg, Anders ^a   Bengtsson, Stefan ^b  

^a UPPSALA UNIVERSITY   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BIPOLAR SEMICONDUCTOR DEVICES; CURRENT VOLTAGE CHARACTERISTICS; ETCHING; MOS DEVICES; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; RELIABILITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING DIAMONDS; SILICON ON INSULATOR TECHNOLOGY; THERMOOXIDATION;

CAPACITANCE VOLTAGE CHARACTERISTICS; CAPPING LAYER; POTASSIUM HYDROXIDE; SILICON ON DIAMOND MATERIALS; WET ETCHING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0030128667     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836638     Document Type: Article

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