Blue and violet photoluminescence from high-dose Si+- and Ge+-implanted silicon dioxide layers

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 107-110

  Rebohle, L ^a   Tyschenko, I E ^b   Frob H ^c   Leo, K ^c   Yankov, R A ^a   Von Borany, J ^a   Kachurin, G A ^b   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FILM GROWTH; ION IMPLANTATION; LIGHT EMISSION; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SILICA; SPECTROSCOPY; CRYSTALLINE MATERIALS; SPECTROSCOPIC ANALYSIS;

BLUE PHOTOLUMINESCENCE; VIOLET PHOTOLUMINESCENCE; PHOTOLUMINESCENCE EXCITATION (PE) SPECTROSCOPY;

DIELECTRIC FILMS;

EID: 0031150221     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00026-9     Document Type: Article

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