Electroluminescence analysis of the structural damage created in SiO2/Si systems by Ar ion implantation

Solid-State Electronics

Volumn 39, Issue 3, 1996, Pages 355-359

  Bota, S ^a   Garrido, B ^a   Morante, J R ^a   Baraban, A ^b   Konorov, P P ^b  

^a UNIVERSITY OF BARCELONA   (Spain)

^b ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMICAL BONDS; CRYSTAL STRUCTURE; EMISSION SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; IRRADIATION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICA;

ARGON ION IMPLANTATION; ELECTROLUMINESCENCE ANALYSIS; STRUCTURAL DAMAGE;

CRYSTAL DEFECTS;

EID: 0030103705     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00137-9     Document Type: Article

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