Extension of the Scharfetter-Gummel Algorithm to the Energy Balance Equation

IEEE Transactions on Electron Devices

Volumn 31, Issue 12, 1984, Pages 1912-1914

  Tang, Ting Wei ^a  

^a UNIVERSITY OF MASSACHUSETTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042734842     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21813     Document Type: Article

References (6)

1. H. Kroemer “Hot-electron relaxation effects in devices,” Solid-State State Electron., vol. 21, no. 1, pp. 61–67, 1978.
2. R. Cook “Numerical simulation of hot-carrier transport in silicon bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-30, no. 9, pp. 1103–1110, Sept. 1983.
3. K. Tomizawa, Y. Awano, N. Hashizume, and M. Kawashina “Simulation of GaAs submicron FET with hot-electron inject on structure,” Electron. Lett., vol. 19, no. 17, pp. 697–698, Aug. 1983.
4. Y. J. Park, D. Navon, and T. Tang, “Monte Carlo simulation of bipolar transistors,” IEEE Trans. Electron Devices, this issue, pp. 1724–1730.
5. D. L. Scharfetter and H. K. Gummel, “Large-signal analysis of a silicon read diode oscillator,” IEEE Trans. Electron Devices, vol. ED-16, pp. 64–77, 1969.
6. R. Stratton, “Diffusion of hot and cold electrons in semiconductor tor barriers,” Phys. Rev., vol. 126, p. 814, 1962.